Non-volatile memory with both single and multiple level cells

ABSTRACT

Memory arrays, and modules, devices and systems that utilize such memory arrays, are described as having a single level non-volatile memory cell interposed between and coupled to a select gate and a multiple level non-volatile memory cell. Various embodiments include structure, process, and operation and their applicability for memory devices and systems. In some embodiments, a memory array is described as including a number of select gates coupled in series to a number of single level non-volatile memory cells and a number of multiple level non-volatile memory cells, where a first select gate is coupled to a first single level non-volatile memory cell interposed between and coupled to the first select gate and a first multiple level non-volatile memory cell.

TECHNICAL FIELD

The present invention relates generally to memory devices and, inparticular, the present invention relates to non-volatile memoryarchitecture.

BACKGROUND

Memory devices are typically provided as internal, semiconductor,integrated circuits in computers or other electronic devices. There aremany different types of memory including random-access memory (RAM),read only memory (ROM), dynamic random access memory (DRAM), synchronousdynamic random access memory (SDRAM), and flash memory.

Flash memory devices have developed into a popular source ofnon-volatile memory for a wide range of electronic applications. Flashmemory devices typically use a one-transistor memory cell that allowsfor high memory densities, high reliability, and low power consumption.Common uses for flash memory include personal computers, personaldigital assistants (PDAs), digital cameras, and cellular telephones.Program code and system data such as a basic input/output system (BIOS)are typically stored in flash memory devices for use in personalcomputer systems.

As the performance and complexity of electronic systems increase, therequirement for additional memory in a system also increases. However,in order to continue to reduce costs of the system, the parts count mustbe kept to a minimum. This can be accomplished by increasing the memorydensity of an integrated circuit by utilizing technologies such as usinga multiple level cell (MLC) in place of one or more single level cell(SLC). For example, MLC NAND flash memory is a cost-effectivenon-volatile memory.

MLCs take advantage of the analog nature of a traditional flash cell byassigning a bit pattern to a specific threshold voltage (Vt) rangestored on the cell. This technology permits the storage of two or morebits per cell, in comparison to the one bit per cell stored on a SLC,the storage capability depending on the quantity of voltage rangesassigned to the cell and the stability of the assigned voltage rangesduring the lifetime operation of the MLC.

For example, a MLC may be assigned four different voltage ranges of 200mV for each range. A dead space of margin of 200 mV to 400 mV can beplaced between each range to prevent the Vt distributions fromoverlapping. If the voltage stored on the cell is within the firstrange, the cell is storing a logical 11 state and can be considered theerased, or unprogrammed, state of the cell.

If a programming voltage exceeds a first potential threshold of a MLCand elevates the stored voltage in the cell such that it is within thesecond range, a lower page of the cell is storing a logical 10 state,which correlates with a one bit SLC going from a 1 erased state to a 0programmed state. This can continue for as many ranges as the MLC hascapacity for storing. For example, a two bit MLC can store elevatedvoltages in upper page ranges such that exceeding a second potentialthreshold can cause the cell to store a logical 00 programmed state andexceeding a third potential threshold can cause the cell to store alogical 01 programmed state. Hypothetically, as many levels as desiredcan be added to a MLC, so long as they remain stable during theoperational lifetime of the non-volatile memory cell.

A current limitation on including additional levels on MLCs, however, isa coupling between gates along the same bit line. Such coupling can beinduced by marked potential differences between adjacent gates. Forexample, a two bit MLC having stored voltage in a range sufficient toresult in an upper page 01 logical state can couple with an adjacentselect gate having a lower potential (e.g., at ground level). Suchcoupling can cause current leakage that results in lowering voltagestored in a MLC into a range of a different logical state and consequenterrors in reading the stored data.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a threshold voltage distribution for a single levelnon-volatile memory cell and a result of a single level cell pageprogramming.

FIGS. 2A-2B are threshold voltage distributions for multiple levelnon-volatile memory cells and results of lower and upper pageprogramming.

FIG. 3 illustrates a portion of a non-volatile memory array architecturein accordance with an embodiment of the present disclosure.

FIG. 4 illustrates a portion of a non-volatile memory array architectureillustrating a number of strings of non-volatile memory cells inaccordance with an embodiment of the present disclosure.

FIG. 5 is a flowchart for programming single level and multiple levelnon-volatile memory cells in accordance with an embodiment of thepresent disclosure.

FIGS. 6A-6B illustrate operational tables for programming sequences thatcan be implemented with the non-volatile memory array architecture inaccordance with embodiments of the present disclosure.

FIG. 7 is a functional block diagram of an electronic memory systemhaving at least one memory device in accordance with an embodiment ofthe present disclosure.

FIG. 8 is a functional block diagram of a memory module having at leastone memory device in accordance with an embodiment of the presentdisclosure.

DETAILED DESCRIPTION

The present disclosure includes various arrays, devices, systems, andmethods for non-volatile memory with both single and multiple levelcells. In one embodiment a memory array is provided having a number ofsingle level non-volatile memory cells (SLCs) and a number of multiplelevel non-volatile memory cells (MLCs). A number of select gates arecoupled in series to the number of single level non-volatile memorycells and the number of multiple level non-volatile memory cells. Afirst select gate is coupled to a first single level non-volatile memorycell interposed between and coupled to the first select gate and a firstmultiple level non-volatile memory cell. The first multiple levelnon-volatile memory cell is directly coupled to a continuous number ofadditional multiple level non-volatile memory cells.

According to various embodiments, non-volatile memory block uniformityis maintained by adding one or more additional word lines (WLs) toaccount for the SLCs separating the MLCs from the select gates. In oneexample embodiment, one SLC separates a continuous string of two (2)-bitMLCs from a source select gate (SGS) and another SLC separates thecontinuous string of MLCs from a drain select gate (SGD) and oneadditional word line is provided to maintain uniformity to a particularmemory block size.

For example, uniformity to a particular memory block size of 128 pagesmay be desired. In this instance, thirty three (33) word lines areprovided, e.g., WL-0 through WL-32, with WL-0 being coupled to the SLCseparating the SGS from the string of MLCs on one end of the string andWL-32 being coupled to the SLC separating the SGD from the string ofMLCs on the other end of the string. In this example embodiment, thirtyone (31) MLCs, associated with WL-1 through WL 31, are connected inseries between the two SLCs. As such, each string provides a selectionof 128 logical programmed states, corresponding to 64 bits of storablememory on each string. A selection between two or more logicalprogrammed states can constitute a bit of storable memory (including anerase state), which can be termed a page when stored in a non-volatilememory array architecture in accordance with embodiments of the presentdisclosure. In various embodiments, to provide a memory block size of128 pages, an even string and an odd string, each having 33 cells asdescribed above, can be arrayed in association with WL-0 through WL-32.Embodiments in accordance with the present disclosure, however, are notlimited to this example.

In the following detailed description the terms wafer and substrate usedin the following description include any base semiconductor structure.Both are to be understood as including silicon-on-sapphire (SOS)technology, silicon-on-insulator (SOI) technology, thin film transistor(TFT) technology, doped and undoped semiconductors, epitaxial layers ofsilicon supported by a base semiconductor, as well as othersemiconductor structures known to one skilled in the art. Furthermore,when reference is made to a wafer or substrate in the followingdescription, previous process steps may have been utilized to formregions/junctions in the base semiconductor structure. The followingdetailed description is, therefore, not to be taken in a limiting sense,and the scope of the present invention is defined only by the appendedclaims and equivalents thereof.

As used herein the term “electrically connected” is intended to imply anability to directly connect an electrical current between at least twoelectrically conducting materials. And, as used herein, “electricallyconducting material(s) and/or layer(s)” is intended to include doped andun-doped semiconductor materials. Further, as used herein, “electricallycoupled” or “coupled” are intended to refer to at least one electricallyconductive or conducting material and/or layer's ability to electricallyinfluence (e.g., influencing the electrical state or behavior of) aneighboring electrically conducting material through capacitive couplingor otherwise, whether or not the two electrically conducting materialsand/or layers are separated by an insulator or dielectric material. Asone of ordinary skill in the art will appreciate, a “dielectric materialand/or layer” is a material and/or layer that does not directly conductelectrical current.

FIG. 1 is a threshold voltage distribution for a single levelnon-volatile memory cell and a result of a single level cell pageprogramming. FIG. 1 illustrates the threshold voltage (Vt) distribution100 movement resulting from a selected SLC programming. In SLCprogramming, a cell is either in a logical “1” state 101 or, through useof a SLC page program 103, or algorithm, can be programmed to a logical“0” state 105. In some embodiments, the logical “1” state can be definedas an unprogrammed or erased state. As such, using the SLC page program103 to increase the threshold voltage Vt sufficiently to cause the SLCto store a programmed threshold voltage 105 can result in the SLCconverting from an erased logical 1 state to a programmed logical 0state.

FIG. 2A is a threshold voltage distribution for a multiple levelnon-volatile memory cell and results of lower and upper pageprogramming. FIG. 2A illustrates the Vt distribution 200 movementsresulting from a selected MLC programming. A MLC algorithm can havethree or more possible Vt movements resulting from supplied program datainput. The embodiment illustrated in FIG. 2A can experience threepossible Vt movements from a logical “11” erased state 201. A firstmovement (1) can use a lower page program 203, similar to SLCprogramming, to raise the stored threshold voltage from the logical “11”erased state 201 to a logical “10” programmed state 205.

In the MLC embodiment of FIG. 2A, an upper page program 207 has twopossible Vt movements based on storage of elevated threshold voltage indistinct ranges. A second movement (2) is from the lower page “10”programmed state 205 to an upper page “00” programmed state 209. A thirdmovement (3) is from the lower page “11” erased state 201 to an upperpage “01” programmed state 211. In the embodiment of FIG. 2A, the “10”state means the upper page is in the unprogrammed logic state 1 and thelower page is in the programmed logic state 0. Each of the three Vtmovements just described for the cell distribution 200 in FIG. 2A, canresult from progressively elevated levels of threshold voltage causingprogressively elevated stored voltages in the MLC storage ranges 205,209, and 211.

The threshold voltage distribution shown in FIG. 2A is only oneembodiment of cell state assignments. Alternate embodiments can assigncell states to different threshold voltage distributions. Theembodiments of the combined SLC and MLC programming method of thepresent disclosure can be utilized with various possible cell statearrangements.

FIG. 2B is another threshold voltage distribution for a multiple levelnon-volatile memory cell and results of lower and upper pageprogramming. FIG. 2B illustrates the Vt distribution 202 movementsresulting from a selected MLC programming. The embodiment illustrated inFIG. 2B can experience three possible Vt movements from a logical “11”erased state 201. The first movement (1) can use a lower page program203, similar to SLC programming, to raise the stored threshold voltagefrom the logical “11” erased state 201 to a logical “10” programmedstate 205.

In the MLC embodiment of FIG. 2B, an upper page program 207 has twopossible Vt movements based on storage of elevated threshold voltage indistinct ranges. The second movement (2) is from the lower page “10”programmed state 205 to an upper page “00” programmed state 209, asshown in FIG. 2A. In the embodiment illustrated in FIG. 2B, a fourthmovement (4) differs from the third movement (3) illustrated in FIG. 2A.The fourth movement (4) of the upper page program 207 is from the lowerpage “10” programmed state 205 to an upper page “01” programmed state211 resulting from providing a threshold voltage to lower page “10”programmed state 205 with higher potential than that used to reach theupper page “00” programmed state 209. Each of the three Vt movementsjust described for the cell distribution 202 in FIG. 2B, can result fromprogressively elevated levels of threshold voltage causing progressivelyelevated stored voltages in the MLC storage ranges 205, 209, and 211.

The threshold voltage distribution shown in FIG. 2B is only oneembodiment of cell state assignments. Alternate embodiments can assigncell states to different threshold voltage distributions. Theembodiments of the combined SLC and MLC programming method of thepresent disclosure can be utilized with various possible cell statearrangements.

FIG. 3 is a top view of a portion of a non-volatile memory arrayarchitecture 300 in accordance with an embodiment of the presentdisclosure. The embodiment of FIG. 3 illustrates a string 300 ofnon-volatile memory cells in a NAND architecture memory array.Embodiments, however, are not limited to NAND architecture. As shown inFIG. 3, a first potential, e.g., source potential, 301 is coupled to oneend of the string of non-volatile memory cells by a first select gatetransistor, e.g., source select gate (SGS), 509-1. In the embodiment ofFIG. 3 the string of non-volatile memory cells, e.g., 313-0, 313-1,313-2, . . . , 313-N, 313-(N+1), are each associated with a respectiveword line, e.g., WL-0, WL-1, WL-2, . . . , WL-N, WL-(N+1). Thedesignator “N” intends that the string can include a number ofnon-volatile memory cells and associated word lines according to variousembodiments.

As shown in FIG. 3, a second select gate transistor, e.g., drain selectgate (SGD), 309-2 couples a bit line (BL) 317 to the other end of thestring of non-volatile memory cells, e.g., 313-0, 313-1, 313-2, . . . ,313-N, 313-(N+1). According to various embodiments, more that one selectgate can be provided to each end of the string of non-volatile memorycells, e.g., 313-0, 313-1, 313-2, . . . , 313-N, 313-(N+1). Severalexamples of providing more than one select gate to each end of a stringof non-volatile memory cells, e.g., 313-0, 313-1, 313-2, . . . , 313-N,313-(N+1) are described in copending, commonly assigned US patentapplications: Ser. No. 11/216,755, entitled “Multiple Select GateArchitecture”, filed on Aug. 31, 2005; Ser. No. 11/218,848, entitled“Operation of Multiple Select Gate Architecture, filed on Sep. 1, 2005;Ser. No. 11/411,376, entitled “Multiple Select Gates With Non-VolatileMemory Cells”, filed on Apr. 26, 2006, all three by the same inventor asthe present disclosure, and which are incorporated herein by reference.

According to various embodiments, the string of non-volatile memorycells 300 includes a number of non-volatile memory cells, e.g., 313-0,313-1, 313-2, . . . , 313-N, 313-(N+1), some of which are single levelnon-volatile memory cells (SLCs) and some of which are multiple levelnon-volatile memory cells (MLCs). Various examples of series string ofnon-volatile memory cells having SLCs and MLCs are described incopending, commonly assigned US patent application: Ser. No. 11/500,153,entitled “Non-Volatile Memory Device with Both Single and Multiple LevelCells”, filed on Aug. 7, 2006, by inventor Jin-Man Han, which isincorporated herein by reference.

However, the embodiments described herein differ from the abovereferenced application in that a first select gate, e.g., SGS 309-1, iscoupled to a first SLC, e.g., 313-0, which is interposed between andcoupled to the first select gate, SGS 309-1, and a first MLC, e.g.,313-1. The first MLC 313-1 is directly coupled to a continuous number ofadditional multiple level non-volatile memory cells, e.g., 313-2, . . ., 313-N. The MLCs are comprised of a lower page and at least one upperpage of data and the SLCs are comprised of a single page of data. As thereader will appreciate, a memory cell capable of storing two alternativedata input selections on a single page can be termed a “1-bit memorycell” or, as described in the present disclosure, a SLC. A memory cellcapable of storing two alternative data input selections on a lower pageand two alternative data input selections on one or more upper pages canbe termed a “2-bit memory cell” or, as described in the presentdisclosure, a MLC. Embodiments, however, are not limited to 2-bit MLCs.

According to various embodiments of the present disclosure the first SLC313-0 has a programmed voltage that is intermediate between a higherprogrammed voltage for the upper page of the first MLC 313-1 and a lowerresting voltage, e.g., 0.0 V or ground, of the first select gate SGS309-1.

In FIG. 3, the portion of the memory array 300 includes a second selectgate, e.g., SGD 309-2, coupled in series to an opposite end of thenumber of non-volatile memory cells relative to the first select gateSGS 309-1. According to various embodiments the string of non-volatilememory cells includes a second SLC 313-(N+1) interposed between andcoupled to the second select gate SGD 309-2 and a second MLC, e.g.,313-N. In various embodiments, the second SLC 313-(N+1) has a programmedvoltage that is intermediate between a higher programmed voltage for theupper page of the second MLC 313-N and a lower resting voltage, e.g.,0.0 V or ground, of the second select gate 309-2.

As mentioned in the background, MLCs take advantage of the analog natureof a traditional flash cell by assigning a bit pattern to a specificthreshold voltage (Vt) range stored on the cell. This technology permitsthe storage of two or more bits per cell, depending on the quality ofvoltage ranges assigned to the cell and the stability of the assignedvoltage ranges during the lifetime operation of the memory cell. Forexample, as illustrated in FIGS. 2A and 2B, a cell may be assigned fourdifferent voltage ranges of 200 millivolts (mV) for each range. A marginof 0.2V to 0.4V may be provided between each range to keep the Vtdistributions from overlapping. If the threshold voltage stored on acell is within the first range, the cell is storing a logical 11 statewhich can be considered the erased state of the cell. If the voltage iswithin the second range, the cell is storing a logical 01 state. Thiscontinues for as many ranges that are used for the cell provided thesevoltage ranges remain stable during the lifetime operation of the memorycell.

One issue with MLC devices is the floating gate to floating gatecoupling that occurs along the same bit line. This coupling can causethe already small margins between states to be reduced, i.e., narrowed,or even disappear, and the Vt distributions to overlap, thus causingerrors in reading data. As illustrated in connection with FIG. 1, theunprogrammed logic state, e.g., state 1, of a SLC can be lower than thestored threshold voltage of the programmed logic state, e.g., state 0.For example, the unprogrammed logic state, state 1, may have a thresholdvoltage of −0.5V while the programmed logic state, state 0, may have astored threshold voltage in the range +0.8V to +1.0 V. As illustrated inconnection with FIGS. 2A and 2B, the unprogrammed logic state, e.g.,state 11, of a MLC can be lower than the stored threshold voltage of aprogrammed logic state, e.g., state 01. For example, the unprogrammedlogic state, state 11, may have a threshold voltage of −0.5V while theprogrammed logic state, state 01, may have a stored threshold voltage inthe range of +3.0V to +3.2V.

During a programming operation, a selected word line (WL) for a flashnon-volatile memory cell to be programmed is biased with a series ofprogramming pulses that might start at approximately 16.0V and increaseincrementally to 20.0V for an SLC and even higher, e.g. to 22.0V, for aMLC. Thus, as the reader will appreciate, the programmed logic state ofan upper page in a MLC, e.g., logic state 01, can have a storedpotential relative to the unprogrammed state, e.g., logic state 11, thatis substantially higher (approximately 3.0V) than that of the programmedthreshold voltage of the SLC, e.g., logic 0, (approximately 0.8V)relative to its unprogrammed state, e.g., logic 1, (approximately 0.0V).The programmed threshold voltage of the SLC, e.g., logic 0, may besimilar (+0.8V to 1.0V) to the lower page programming of an MLC. That isthe logic state 10 in FIGS. 2A and 2B means the upper page of the MLC islogic 1, “erased”, and the lower page of the MLC is logic 0,“programmed”.

In some programming scenarios, a potential of a select gate can be aslow as, or lower than, the potential of an adjacent SLC or an adjacentMLC. The higher the potential differential of a programmed memory cellrelative to its adjacent select gate, the higher the probability thatthe select gate and the memory cell will undergo coupling such thatcurrent leakage from the memory cell reduces the stored potential enoughto fall into a range of a different logical state so as to result inerrors in reading the stored data.

Since the highest programming voltages placed on a selected WL toprogram a MLC occur only during programming the upper page of the MLC,the present embodiments implement an non-volatile memory cellarchitecture whereby only SLC are used adjacent to select gates. Inother words, the edge word lines on either end of the string ofnon-volatile memory cells, e.g., WL-0 and WL-(N+1) in FIG. 3, will onlyhave lower page programming applied thereto. As such, the voltagedifference between the edge word line and the adjacent select gate,e.g., WL-0 and SGS, can be reduced from upper page Vt peak 211 in FIGS.2A and 2B (e.g., 3.0V) to lower page Vt peak 205 in FIGS. 2A and 2B(e.g., 0.8V). In various embodiments, this voltage difference reductionmay reduce the voltage difference between the edge word line and theadjacent select gate, e.g., WL-0 and SGS, by approximately 2.0V (e.g.,3.0V-0.8V). According to the embodiments, this voltage differencereduction may significantly reduce charge leakage and select gate toword line breakdown, thus reducing the occurrence of errors in readingdata.

The embodiments described herein, in effect, use a first SLC 313-0interposed between and coupled to the first select gate, SGS 309-1, anda first MLC 313-1 and can use a second SLC 313-(N+1) interposed betweenand coupled to the second select gate SGD 309-2 and a second MLC 313-Nto shield a high potential 2-bit MLC from current leakage to an adjacentlow potential select gate. In other words, a 1-bit SLC with anintermediate potential can be interposed between the MLC and the selectgate. For example, having a 1-bit SLC that is programmed to a 0 logicstate, and storing 1.0 V potential, interposed between a 2-bit MLC thatis programmed to a 01 logic state, and storing 3.0 V potential, and aselect gate with ground potential (e.g., 0 V) can prevent currentleakage to the select gate. Further, in various embodiments, when thefirst MLC 313-1 and/or the second MLC 313-N is programmed the first SLC313-0 and/or second SLC 313 is also programmed such that the potentialdifference between the MLC and the SLC is reduced to approximately 2.0 Vor less, which can reduce the probability of current leakage relative toa 3.0 V potential difference between the MLC and the select gate.

Moreover, as described in connection with the embodiment of FIG. 3, thefirst non-volatile memory cell 313-1 is directly coupled to a continuousnumber of additional multiple level non-volatile memory cells, e.g.,313-2, . . . , 313-N. The MLCs are comprised of a lower page and atleast one upper page of data and the SLCs are comprised of a single pageof data. As such, the memory string architecture can provide asubstantially increased bit density relative to a string of alternatingMLC/SLCs (e.g., as described in copending, commonly assigned U.S. patentapplication Ser. No. 11/500,153, entitled “Non-Volatile Memory Devicewith Both Single and Multiple Level Cells”, filed on Aug. 7, 2006, byinventor Jin-Man Han, which is incorporated herein by reference) andrelative to a string of strictly SLCs while also maintaining and/orimproving memory stability (e.g., reducing read errors) by reducing asource of charge leakage.

In various embodiments, as will be discussed in more detail inconnection with FIG. 4, non-volatile memory block uniformity can bemaintained by adding one or more additional word lines (WLs) to accountfor the SLCs separating the MLCs from the select gates. For example, theembodiment of FIG. 3 illustrates one SLC separating a string of two(2)-bit MLCs from a source select gate (SGS) and another SLC separatingthe string of MLCs from a drain select gate (SGD). In this exampleembodiment, if the previous non-volatile memory block were to include“N” MLCs, associated with “N” word lines (WLs) in each block, then theembodiment of FIG. 3 illustrates the inclusion of one additional wordline, e.g., WL-(N+1) is provided to maintain uniformity to previousmemory block size. That is, if the previous memory block size was 64bits then thirty-two (32) MLCs could have been provided in each stringand associated with 32 WLs (e.g., N=32). Each of the 32 MLCs would haveprovided for four (4) logical programmed states—that is, two (2) bits orpages of information—for a total of 128 logical programmed states (e.g.,32×4=128). In the embodiment of FIG. 3, word lines WL-0 and WL-(N+1) areassociated only with SLCs capable of providing one (1) page ofinformation, and word lines WL-1, . . . , WL-N, are associated with MLCseach providing two (2) pages of information.

If N were previously thirty-two (32) to achieve 64 pages per block, thenin this embodiment thirty-three (33) word lines are provided, e.g., WL-0through WL-(N+1). WL-0 is coupled to the SLC 313-0 separating the SGS309-1 from the string of MLCs on one end of the string. WL-(N+1) iscoupled to the SLC 313-(N+1) separating the SGD 309-2 from the string ofMLCs on the other end of the string. That is, in this example embodimentthirty one (31) MLCs, associated with WL-1 through WL-N, are connectedin series between the two SLCs associated with WL-0 and WL-(N+1). Thisexample embodiment illustrates an implementation for adding oneadditional word line, e.g., WL-(N+1), to achieve a string of thirty-one(31) MLCs (313-1, . . . , 313-31) providing 124 logical programmedstates (31×4=124) and another two (2) SLCs (313-0 and 313-(N+1)) in thestring provide another 4 logical programmed states (2×2=4) to maintainthe total of 128 logical programmed states—that is, 64 pages ofinformation—in the block. Embodiments, however, are not limited to thisexample.

FIG. 4 illustrates a portion of a non-volatile memory array 400architecture illustrating a number of strings of non-volatile memorycells in accordance with an embodiment of the present disclosure. Forease of illustration, the portion of non-volatile memory array 400 doesnot show all of the elements associated with a memory array. Forexample, only two bit lines are shown, e.g., BL1 at 427 and BL2 at 431.The number of bit lines implemented in an actual memory array can dependupon intended memory capacity and/or density.

The non-volatile memory array 400 embodiment of FIG. 4 illustrates anarray of floating gate non-volatile memory cells arranged from a sourceline (SL) at 401 in two series strings 403, 405. The embodiment of FIG.4 shows a NAND architecture for the non-volatile memory cells. That is,each of the floating gate memory cells is series coupled source to drainin each NAND string 403, 405. Embodiments, however, are not limited tothis example. Word lines WL-0 through WL-32 span across both seriesstrings 403, 405 to couple the control gates of each memory cell in arow, e.g., 413-0 and 415-0 on WL-0, to control operation of the memorycells. The embodiment of FIG. 4 shows 33 word lines per memory block,although alternative embodiments could have different numbers of wordlines.

In operation, the word lines WL-0 through WL-32 select the individualfloating gate memory cells in the series string 403, 405 to be writtento or read from and operate the remaining floating gate memory cells ineach series string 403, 405 in a pass through mode. Examples of reading,writing, and programming non-volatile memory cells are provided in theabove referenced, copending, commonly assigned references which areincorporated herein by reference. Each series string 403, 405 is coupledto the source line 401 by a source select gate SGS, e.g., 409-1 and411-1, and to an individual bit line, e.g., BL1 at 427 and BL2 at 431,by a drain select gate SGD, e.g., 409-2 and 411-2. The SGSs 409-1 and411-1 are controlled by coupling to a source select gate control line407. The SGDs 409-2 and 411-2 are controlled by coupling to a drainselect gate control line 429.

According to various embodiments, at least one string, e.g., 403 and/or405, includes a non-volatile memory cell string according to theembodiments described in connection with FIG. 3. Hence, using string 403as an example, non-volatile memory cells 413-0 and 413-32 are operatedas a SLCs while non-volatile memory cells 413-1, . . . , 413-31 areoperated as MLCs. String 405 can have an analogous structure. Forexample, in the embodiment shown in FIG. 4, WL-0 adjacent SGSs 409-1 and411-1 is coupled to SLCs 413-0 and 415-0 interposed between the SGSs409-1 and 411-1 and MLCs 413-1 and 415-1 associated with WL-1. MLCs413-1 and 415-1 on WL-1 are then adjacent to MLCs 413-2 and 415-2 onWL-2. As shown in the embodiment, the strings, 403 and 405 continue,repeating MLCs up until MLCs 413-31 and 415-31 associated with WL-31.The strings, 403 and 405, then end with SLCs 413-32 and 415-32interposed between MLCs 413-31 and 415-31 and the SGDs 409-2 and 411-2respectively. Embodiments, however, are not limited to this examplenumber of non-volatile memory cells and can contain an alternativenumber and/or arrangement of non-volatile memory cells and word lines.The advantages attained and presented in the discussion of embodimentsin FIG. 3 can similarly be realized in the memory array of FIG. 4.

The embodiment of FIG. 4 is further useful for illustrating anotherexample embodiment of the present disclosure. That is, the embodiment ofFIG. 4 is useful for illustrating that non-volatile memory blockuniformity can be maintained by adding one or more additional word lines(WLs) to account for the SLCs separating the MLCs from the select gates.For example, the embodiments of FIGS. 3 and 4 illustrate one SLCseparating a string of two (2)-bit MLCs from a source select gate (SGS)and another SLC separating the string of MLCs from a drain select gate(SGD). In the example embodiment of FIG. 3, if a previous non-volatilememory block were to include “N” MLCs, associated with “N” total wordlines (WLs) in each block, then the embodiment of FIG. 3 illustrates theinclusion of one additional word line, e.g., WL-(N+1) is provided tomaintain uniformity to previous memory block size. For example, if theprevious memory block size was 64 pages, then thirty-two (32) MLCs couldhave been provided in each string and associated with 32 WLs (e.g.,N=32). Each of the 32 MLCs would have provided two (2) pages ofinformation for a total of 64 pages of information (e.g., 32×2=64). Incontrast, in the embodiment of FIG. 3, word lines WL-0 and WL-(N+1) areassociated only with SLCs capable of providing one (1) page ofinformation, and word lines WL-1, . . . , WL-N, are associated with MLCsproviding two (2) pages of information.

Thus, if N were previously thirty-two (32) to achieve 64 pages perblock, then in the embodiment of FIG. 3 thirty-three (33) word lines areprovided, e.g., WL-0 through WL-(N+1). In FIG. 3, WL-0 is coupled to theSLC 313-0 separating the SGS 309-1 from the string of MLCs on one end ofthe string and WL-(N+1) is coupled to the SLC 313-(N+1) separating theSGD 309-2 from the string of MLCs on the other end of the string.

FIG. 4 similarly illustrates such an embodiment. That is, in theembodiment of FIG. 4 thirty one (31) MLCs (413-1, . . . , 413-31),associated with WL-1 through WL-31, are connected in series between thetwo SLCs (413-0 and 413-32) associated with WL-0 and WL-32. Hence, theexample embodiment of FIG. 4 illustrates an implementation for addingone additional word line, e.g., WL-32, to achieve a string of thirty-one(31) MLCs (413-1, . . . , 413-31) providing 124 logical programmedstates (31×4=124) and another two (2) SLCs (413-0 and 413-32) in thestring provide another 4 logical programmed states (2×2=4) to maintainthe total of 128 logical programmed states, or 64 pages, in the block.Embodiments, however, are not limited to this example. In someembodiments, all the non-volatile memory cells on a string can becomprised of MLCs. For example, WL-0 and WL-32 can have two (2) bits permemory cell and WL-1 through WL-31 can have four (4) bits per cell,which can result in a string including 128 bits, or pages.

FIG. 5 is a flowchart for programming single level and multiple levelnon-volatile memory cells in accordance with an embodiment of thepresent disclosure. The programming process 500 can have a program start501 that checks a user supplied page address 503 to determine whetherprogramming of one or more of the SLCs and/or one or more of the MLCs inthe memory array is required. For example, referring to FIG. 3, ifprogramming of either SLC 313-0 or 313-(N+1) is selected, a SLCalgorithm 505 illustrated in FIG. 5 is employed. Referring to again toFIG. 3, if programming of MLCs 313-1, . . . , 313-N is selected, a MLCalgorithm 507 illustrated in FIG. 5 is employed. When programming ofeach of the required memory cells is accomplished, the program can end509.

Programming as illustrated in FIG. 5 can be performed using a memoryarray that, in various embodiments, includes a number of NAND strings ofnon-volatile memory cells, a number of source select gates on a sourceside of a string, and a number of drain select gates on a drain side ofa string. The number of source select gates includes a number of sourceselect gates individually coupled to a SLC, and the number of drainselect gates includes a number of drain select gates individuallycoupled to another SLC. Additionally, in various embodiments the SLCindividually coupled to the source select gates and the SLC individuallycoupled to the drain select gates are coupled to and separated by acontinuous series of multiple level non-volatile memory cells.

A variety of programming modes affecting the architecture of strings ofnon-volatile memory cells can be used to mitigate the occurrence and/orthe effects of current leakage. Related examples are described in theabove referenced copending, commonly-assigned U.S. patent applications.

FIG. 6A illustrates an operational table for a programming sequence thatcan be implemented with the non-volatile memory array architecture inaccordance with an embodiment of the present disclosure. The operationaltable 600 in FIG. 6A illustrates a sequence of programming whereby onepage (0) is programmed on a first SLC coupled to WL-0 in an even string602 of 33 non-volatile memory cells followed by programming one page (1)on a second SLC coupled to WL-0 in an odd string 604 of 33 non-volatilememory cells.

After programming the one page on each of the two SLCs associated withWL-0, programming of the two MLCs associated with each of word linesWL-1 through WL-31 can begin. In the embodiment of operational table600, the lower page (2) of the first MLC associated with WL-1 on theeven string 602 is programmed following programming of the two SLCsassociated with WL-0. Next, the upper page (3) of the same MLCassociated with WL-1 on the even string 602 is programmed beforeprogramming of the second MLC associated with WL-1, which is on the oddstring 604 of 33 non-volatile memory cells. The lower page (4) of thesecond MLC associated with WL-1 is programmed in this embodiment beforethe upper page (5) of the second MLC is programmed.

After the pair of MLCs associated with WL-1 is programmed, programmingof the pair of MLCs associated with WL-2 can be performed in a similarmanner. That is, the lower page (6) of the MLC on the even string 602 isprogrammed before the upper page (7) is programmed, which is followed byprogramming the lower page (8) on the odd string 604 before programmingthe upper page (9). A sequential progression through each of the MLCsassociated with WL-3 through WL-31 on the even string 602 and the oddstring 604 can be similarly programmed.

In the embodiment shown in operational table 600, after all the pages inthe MLCs have been programmed, the page (126) of the third SLC, which isassociated with WL-32 on the even string 602, can be programmed. Afterthe one page (126) of the third SLC is programmed, the last page (127)can be programmed on the fourth SLC, which is associated with WL-32 onthe odd string 604. By enabling sequential programming of pages 0-127 asshown in the operational table 600, the non-volatile memory arrayarchitecture with even and odd pages each having 33 non-volatile memorycells can provide 128 pages of storable memory.

FIG. 6B illustrates an operational table for another programmingsequence that can be implemented with the non-volatile memory arrayarchitecture in accordance with an embodiment of the present disclosure.The operational table 601 in FIG. 6B illustrates a sequence ofprogramming whereby one page (0) is programmed on a first SLC coupled toWL-0 in an even string 603 of 33 non-volatile memory cells followed byprogramming one page (1) on a second SLC coupled to WL-0 in an oddstring 605 of 33 non-volatile memory cells.

After programming the one page on each of the two SLCs associated withWL-0, programming of the non-volatile memory cells associated with eachof word lines WL-1 through WL-32 can begin. In the embodiment ofoperational table 601, the lower page (2) of the first MLC associatedwith WL-1 on the even string 603 is programmed following programming ofthe two SLCs associated with WL-0. Next, the lower page (3) of thesecond MLC associated with WL-1, which is located on the odd string 605,is programmed, followed by programming of the lower page (4) of a thirdMLC, which is associated with WL-2 on the even string 603 of 33non-volatile memory cells. The lower page (5) of a fourth MLC associatedwith WL-2 on the odd string 605 is programmed in this embodiment beforethe upper page (6) is programmed on the first MLC associated with WL-1on the even string 603. After the upper page (6) on the first MLCassociated with WL-1 on the even string 603 is programmed, the upperpage (7) of the second MLC associated with WL-1 on the odd string 605can be programmed.

The programming sequence embodiment just described with regard tooperational table 601, is formulated such that the stored potential(e.g., 0.8 V) of the two SLC pages (0, 1) of WL-0 is elevated relativeto an unprogrammed state (e.g., 0.0 V) before the lower pages (2, 3)and, in particular, the upper pages (6, 7) of the two MLCs associatedwith WL-1 are programmed so as to have elevated stored potentials (e.g.,3.0 V). Moreover, the programming sequence embodiment illustrated inoperational table 601 allows the lower pages (4, 5) of the two MLCsassociated with WL-2 to be programmed so as to have elevated storedpotentials (e.g., 0.8-1.0 V instead of 0.0 V) before the upper pages (6,7) of the two MLCs associated with WL-1 are programmed so as to haveelevated stored potentials (e.g., 3.0 V).

Hence, the programming sequence embodiment shown in operational table601 can reduce the probability of coupling of one or more programmedMLCs in a word line adjacent a select gate (e.g., the SGS) and also canreduce the probability of coupling with an unprogrammed MLC on a wordline located more distal on the string. As such, the probability ofcurrent drainage resulting in erroneous reading of stored data can bereduced.

After the upper pages (6, 7) of the pair of MLCs associated with WL-1are programmed, programming of the pair of lower pages (8, 9) of theMLCs associated with WL-3 can be performed. That is, the upper page (6)of the MLC associated with WL-1 on the even string 603 is programmedbefore the upper page (7) is programmed on the MLC associated with WL-1of the odd string 605, which is followed by programming the lower page(8) of the MLC associated with WL-3 on the even string 603 beforeprogramming the lower page (9) of the MLC associated with WL-3 on theodd string 605.

A sequential progression through each of the MLCs associated with WL-3through WL-30 on the even string 602 and the odd string 604 can beprogrammed in accordance with the sequence just described, asillustrated in the embodiment of operational table 601. For example,before the upper page of one or more MLCs associated with a word line onone or more strings is programmed, the lower page of each MLC associatedwith adjacent word lines (e.g., WL-5 and WL-7 are adjacent WL-6) on theone or more strings is programmed. Programming of lower pages ofmultiple MLCs proximal to a MLC with a programmed upper page having anelevated stored potential can reduce the probability of coupling with,and current leakage to, MLCs located on the same string and alsocross-coupling with, and current leakage to, MLCs located on differentstrings.

In the embodiment shown in operational table 601, after the upper pages(122, 123) have been programmed on the MLCs associated with WL-30, thepage (124) of a third SLC, which is associated with WL-32 on the evenstring 603, is programmed. After the one page (124) of the third SLC isprogrammed, the one page (125) can be programmed on a fourth SLC, whichis associated with WL-32 on the odd string 605. When the storedpotentials of both SLCs associated with WL-32, and adjacent the selectgate (e.g., the SGD), have been elevated (e.g., from 0.0 to 0.8 V), theupper pages (126, 127) of the MLCs associated with WL-31 on the evenstring 603 and the odd string 605 can be programmed to elevate thestored potential (e.g., to 3.0 V). Consistent with the programmingsequence described above for the embodiment of operational table 601,the lower pages (120, 121) of the MLCs associated with WL-31 areprogrammed before the upper pages (122, 123) of the MLCs associated withof WL-30.

Hence, the probability can be reduced for coupling a proximal MLC with,and current leakage to, a second select gate (e.g., the SGD) at one endof a string relative to a first select gate (e.g., the SGS) at the otherend of the string. In addition, the probability can be reduced forcoupling of a last MLC on a string that has a programmed upper page withelevated stored potential with a proximal unprogrammed MLC in thedirection of the first select gate because the proximal MLCs havealready elevated lower page potentials. By programming the lower pagesof MLCs associated with word lines in the direction of the first selectgate and located on other strings, the probability can be reduced forcross-coupling of a last MLC on a string having an elevated upper pagepotential with proximal MLCs on other strings. As described above forthe embodiment illustrated in operational table 600, by enablingsequential programming of pages 0-127 as shown in operational table 601,the non-volatile memory array architecture with even and odd pages eachhaving 33 non-volatile memory cells can provide 128 pages of storablememory.

In an embodiment of the present disclosure, formation of new memoryblocks that maintain a previous memory block size can be accomplished byadding a number of word lines to a string having a number of singlelevel non-volatile memory cells and a number of multiple level memorycells for maintaining a previous memory block size. In variousembodiments, adding the number of word lines can include adding a numberof non-volatile memory cells selected from single level non-volatilememory cells and multiple level memory cells. In some embodiments,forming the memory block can include using one or more strings having anumber of single level non-volatile memory cells and a number ofmultiple level memory cells.

In some embodiments, maintaining the previous memory block size caninclude maintaining a particular number selected from data inputselection choices, memory bits, and/or pages associated with theprevious memory block size. Additionally, maintaining the previousmemory block size in some embodiments can include maintaining the numberof data input selection choices on a string at around, or exactly, 128,the number of memory bits on a string at around, or exactly, 64, and/orthe number of pages in a memory block at around, or exactly, 128.

FIG. 7 is a functional block diagram of an electronic memory systemhaving at least one memory device in accordance with an embodiment ofthe present disclosure. Memory system 700 includes a processor 710coupled to a non-volatile memory device 720 that includes a memory array730 of non-volatile cells. The memory system 700 can include separateintegrated circuits or both the processor 710 and the memory device 720can be on the same integrated circuit. The processor 710 can be amicroprocessor or some other type of controlling circuitry such as anapplication-specific integrated circuit (ASIC).

For clarity, the electronic memory system 700 has been simplified tofocus on features with particular relevance to the present disclosure.The memory device 720 includes an array of non-volatile memory cells730, which can be floating gate flash memory cells with a NANDarchitecture. The control gates of each row of memory cells are coupledwith a word line, while the drain regions of the memory cells arecoupled to bit lines. The source regions of the memory cells are coupledto source lines. As will be appreciated by those of ordinary skill inthe art, the manner of connection of the memory cells to the bit linesand source lines depends on whether the array is a NAND architecture, aNOR architecture, and AND architecture, or some other memory arrayarchitecture.

The embodiment of FIG. 7 includes address circuitry 740 to latch addresssignals provided over I/O connections 762 through I/O circuitry 760.Address signals are received and decoded by a row decoder 744 and acolumn decoder 746 to access the memory array 730. In light of thepresent disclosure, it will be appreciated by those skilled in the artthat the number of address input connections depends on the density andarchitecture of the memory array 730 and that the number of addressesincreases with both increased numbers of memory cells and increasednumbers of memory blocks and arrays.

The memory array 730 of non-volatile cells can have a NAND architectureas an embodiment of the present disclosure. The non-volatile memorycells (not shown in FIG. 7) of the memory array 730 can be floating gatememory cells, NROM cells, or other types of one-transistor non-volatilememory cells.

The memory device 720 reads data in the memory array 730 by sensingvoltage and/or current changes in the memory array columns usingsense/buffer circuitry that in this embodiment can be read/latchcircuitry 750. The read/latch circuitry 750 can be coupled to read andlatch a row of data from the memory array 730. I/O circuitry 760 isincluded for bi-directional data communication over the I/O connections762 with the processor 710. Write circuitry 755 is included to writedata to the memory array 730.

Control circuitry 770 decodes signals provided by control connections772 from the processor 710. These signals can include chip signals,write enable signals, and address latch signals that are used to controlthe operations on the memory array 730, including data read, data write,and data erase operations. In various embodiments, the control circuitry770 is responsible for executing instructions from the processor 710 toperform the operating and programming methods of the present disclosure,as well as determining whether a particular memory cell is to beprogrammed using a SLC or a MLC algorithm. The control circuitry can bea state machine, a sequencer, or some other type of controller. It willbe appreciated by those skilled in the art that additional circuitry andcontrol signals can be provided, and that the memory device detail ofFIG. 7 has been reduced to facilitate ease of illustration.

In various embodiments, the processor 710 and/or the control circuitry770 control operation of the memory system 700 by applying a firstselect line potential to a source select gate and second select linepotential to a drain select gate. The processor 710 and/or the controlcircuitry 770 apply a first word line potential to a second non-volatilememory cell in a NAND string relative to a direction of the source gateor the drain gate that is closer, where the second non-volatile memorycell is a first multiple level non-volatile memory cell directly coupledto at least one additional multiple level non-volatile memory cell. Theprocessor 710 and/or the control circuitry 770 also apply a second wordline potential to a first non-volatile memory cell in the NAND string,which is a single level non-volatile memory cell, where the second wordline potential is lower than the first word line potential and greaterthan a potential of a directly coupled select gate. In some embodiments,a third word line potential is applied to a number of unselectednon-volatile memory cells in the NAND string.

By having the potential of the SLC lower than the potential of the MLC,a probability of current leakage to either an adjacent SGS or anadjacent SGD from a programmed SLC can be reduced relative to aprobability of current leakage from a programmed MLC with a higherpotential. In various embodiments, programming by the processor 710and/or the control circuitry 770 can contribute to reduction of currentleakage when the memory array 730 has no SGS and no SGD adjacent a MLCin a NAND string, when each SGS and each SGD is adjacent a SLC in theNAND string, and where no MLC is adjacent more than one SLC in the NANDstring. In some embodiments, programming can be performed using a memoryarray having a plurality of serial NAND strings each coupled to a bitline and a plurality of rows of non-volatile memory cells.

In various embodiments, programming a NAND flash memory device includescontrolling memory operations using a memory control circuit. In someembodiments, controlling memory operations includes using a statemachine as the memory control circuit.

As described in particular embodiments above, programming a memory arraycan be performed by programming a single level memory cell adjacent aselect gate to a programmed state before a next adjacent multiple levelmemory cell is in a programmed state. In another embodiment of thepresent disclosure, programming a memory array can be performed byprogramming a single level memory cell adjacent a select gate to aprogrammed state when a next adjacent multiple level memory cell isalready in a programmed state in order to reduce the probability ofcurrent leakage from the programmed multiple level memory cell to theselect gate adjacent the single level memory cell.

FIG. 8 is a functional block diagram of a memory module having at leastone memory device in accordance with an embodiment of the presentdisclosure. Memory module 800 is illustrated as a memory card, althoughthe concepts discussed with reference to memory module 800 areapplicable to other types of removable or portable memory (e.g., USBflash drives) and are intended to be within the scope of “memory module”as used herein. In addition, although one example form factor isdepicted in FIG. 8, these concepts are applicable to other form factorsas well.

In some embodiments, memory module 800 will include a housing 805 (asdepicted) to enclose one or more memory devices 810, though such ahousing is not essential to all devices or device applications. At leastone memory device 810 is a non-volatile memory having an architecture inaccordance with an embodiment of the invention. Where present, thehousing 805 includes one or more contacts 815 for communication with ahost device. Examples of host devices include digital cameras, digitalrecording and playback devices, PDAs, personal computers, memory cardreaders, interface hubs and the like. For some embodiments, the contacts815 are in the form of a standardized interface. For example, with a USBflash drive, the contacts 815 might be in the form of a USB Type-A maleconnector. For some embodiments, the contacts 815 are in the form of asemi-proprietary interface, such as might be found on CompactFlash™memory cards licensed by SanDisk Corporation, Memory Stick™ memory cardslicensed by Sony Corporation, SD Secure Digital™ memory cards licensedby Toshiba Corporation and the like. In general, however, contacts 815provide an interface for passing control, address and/or data signalsbetween the memory module 800 and a host having compatible receptors forthe contacts 815.

The memory module 800 may optionally include additional circuitry 820,which may be one or more integrated circuits and/or discrete components.For some embodiments, the additional circuitry 820 may include a memorycontroller for controlling access across multiple memory devices 810and/or for providing a translation layer between an external host and amemory device 810. For example, there may not be a one-to-onecorrespondence between the number of contacts 815 and a number of 810connections to the one or more memory devices 810. Thus, a memorycontroller could selectively couple an I/O connection (not shown in FIG.8) of a memory device 810 to receive the appropriate signal at theappropriate I/O connection at the appropriate time or to provide theappropriate signal at the appropriate contact 815 at the appropriatetime. Similarly, the communication protocol between a host and thememory module 800 may be different than what is required for access of amemory device 810. A memory controller could then translate the commandsequences received from a host into the appropriate command sequences toachieve the desired access to the memory device 810. Such translationmay further include changes in signal voltage levels in addition tocommand sequences.

The additional circuitry 820 may further include functionality unrelatedto control of a memory device 810 such as logic functions as might beperformed by an ASIC. Also, the additional circuitry 820 may includecircuitry to restrict read or write access to the memory module 800,such as password protection, biometrics or the like. The additionalcircuitry 820 may include circuitry to indicate a status of the memorymodule 800. For example, the additional circuitry 820 may includefunctionality to determine whether power is being supplied to the memorymodule 800 and whether the memory module 800 is currently beingaccessed, and to display an indication of its status, such as a solidlight while powered and a flashing light while being accessed. Theadditional circuitry 820 may further include passive devices, such asdecoupling capacitors to help regulate power requirements within thememory module 800.

CONCLUSION

Non-volatile memory devices have been described utilizing anarchitecture including an SLC interposed between a select gate and a MLCon the source and/or drain ends of non-volatile memory cell strings. Byutilizing such a architecture, memory density can be increased whilesimultaneously reducing the probability of current leakage. Byincreasing the density of memory storage, the footprint of thenon-volatile memory cell strings can be reduced, thereby facilitatingsmaller memory device sizing.

Although specific embodiments have been illustrated and describedherein, those of ordinary skill in the art will appreciate that anarrangement calculated to achieve the same results can be substitutedfor the specific embodiments shown. This disclosure is intended to coveradaptations or variations of various embodiments of the presentdisclosure. It is to be understood that the above description has beenmade in an illustrative fashion, and not a restrictive one. Combinationof the above embodiments, and other embodiments not specificallydescribed herein will be apparent to those of skill in the art uponreviewing the above description. The scope of the various embodiments ofthe present disclosure includes other applications in which the abovestructures and methods are used. Therefore, the scope of variousembodiments of the present disclosure should be determined withreference to the appended claims, along with the full range ofequivalents to which such claims are entitled.

In the foregoing Detailed Description, various features are groupedtogether in a single embodiment for the purpose of streamlining thedisclosure. This method of disclosure is not to be interpreted asreflecting an intention that the disclosed embodiments of the presentdisclosure have to use more features than are expressly recited in eachclaim. Rather, as the following claims reflect, inventive subject matterlies in less than all features of a single disclosed embodiment. Thus,the following claims are hereby incorporated into the DetailedDescription, with each claim standing on its own as a separateembodiment.

1. A memory array, comprising: a number of single level non-volatilememory cells; a number of multiple level non-volatile memory cells; anumber of select gates coupled in series to the number of single levelnon-volatile memory cells and the number of multiple level non-volatilememory cells; and wherein a first select gate is coupled to a firstsingle level non-volatile memory cell interposed between and coupled tothe first select gate and a first multiple level non-volatile memorycell that is directly coupled to a continuous number of additionalmultiple level non-volatile memory cells.
 2. The array of claim 1,wherein the multiple level non-volatile memory cells are comprised of alower page and at least one upper page of data and the single levelnon-volatile memory cells are comprised of a single page of data.
 3. Thearray of claim 2, wherein the first single level non-volatile memorycell has a programmed voltage that is intermediate between a higherprogrammed voltage for the upper page of the first multiple levelnon-volatile memory cell and a lower resting voltage of the first selectgate.
 4. The array of claim 1, wherein the array includes a secondselect gate coupled in series to an opposite end of a number of multiplelevel non-volatile memory cells relative to the first select gate. 5.The array of claim 4, wherein the array includes a second single levelnon-volatile memory cell interposed between and coupled to the secondselect gate and a second multiple level non-volatile memory cell.
 6. Thearray of claim 5, wherein the second single level non-volatile memorycell has a programmed voltage that is intermediate between a higherprogrammed voltage for the upper page of the second multiple levelnon-volatile memory cell and a lower resting voltage of the secondselect gate.
 7. The array of claim 1, wherein the array includes anumber of single level memory cells and a number of multiple levelnon-volatile memory cells coupled in series.
 8. The array of claim 7,wherein the array includes a NAND string.
 9. A memory array, comprising:a number of NAND strings of non-volatile memory cells; a number ofsource select gates on a source side of a string; a number of drainselect gates on a drain side of a string; and wherein the number ofsource select gates includes a number of source select gatesindividually coupled to a single level non-volatile memory cell, and thenumber of drain select gates includes a number of drain select gatesindividually coupled to a single level non-volatile memory cell; andwherein the single level non-volatile memory cells individually coupledto the source select gates and the single level non-volatile memorycells individually coupled to the drain select gates are coupled to andseparated by a continuous series of multiple level non-volatile memorycells.
 10. The array of claim 9, wherein the array is comprised of aNAND architecture of flash memory cells.
 11. The array of claim 9,wherein the single level non-volatile memory cells are comprised of asingle page of data and the multiple level non-volatile memory cells arecomprised of a lower page and an upper page of data and wherein eachpage enables two data input selections.
 12. The array of claim 11,wherein the NAND string enables 128 data input selections.
 13. The arrayof claim 12, wherein the 128 data input selections are enabled by acontinuous series of 31 multiple level non-volatile memory cells coupledto a first single level non-volatile memory cell that is coupled to asource select gate, and a second single level non-volatile memory cellthat is coupled to a drain select gate.
 14. A memory device, comprising:an array of non-volatile memory cells including a string of non-volatilememory cells; circuitry for control and access to the array ofnon-volatile memory cells; wherein the array of non-volatile memorycells includes: a number of single level non-volatile memory cells; anumber of multiple level non-volatile memory cells; a number of selectgates coupled in series to the number of single level non-volatilememory cells and the number of multiple level non-volatile memory cells;and wherein a first select gate is coupled to a first single levelnon-volatile memory cell interposed between and coupled to the firstselect gate and a first multiple level non-volatile memory cell that isdirectly coupled to a continuous number of additional multiple levelnon-volatile memory cells.
 15. The memory device of claim 14, whereinthe first single level non-volatile memory cell has a programmed voltagethat is intermediate between a higher programmed voltage for an upperpage of the first multiple level non-volatile memory cell and a lowerresting voltage of the first select gate.
 16. The memory device of claim14, wherein the array includes a second select gate coupled in series toan opposite end of a number of multiple level non-volatile memory cellsrelative to the first select gate.
 17. The memory device of claim 16,wherein the array includes a second single level non-volatile memorycell interposed between and coupled to the second select gate and asecond multiple level non-volatile memory cell.
 18. The memory device ofclaim 17, wherein the second single level non-volatile memory cell has aprogrammed voltage that is intermediate between a higher programmedvoltage for the upper page of the second multiple level non-volatilememory cell and a lower resting voltage of the second select gate.
 19. Amemory module, comprising: a number of contacts; two or more memorydevices, each having access lines selectively coupled to the number ofcontacts; and wherein at least one of the memory devices includes: anarray of non-volatile memory cells including a string of non-volatilememory cells; circuitry for control and access to the array ofnon-volatile memory cells; wherein the array of non-volatile memorycells includes: a number of NAND strings of non-volatile memory cells; anumber of source select gates on a source side of a string; a number ofdrain select gates on a drain side of a string; and wherein the numberof source select gates includes a number of source select gatesindividually coupled to a single level non-volatile memory cell, and thenumber of drain select gates includes a number of drain select gatesindividually coupled to a single level non-volatile memory cell; andwherein the single level non-volatile memory cells individually coupledto the source select gates and the single level non-volatile memorycells individually coupled to the drain select gates are coupled to andseparated by a continuous series of multiple level non-volatile memorycells.
 20. The memory module of claim 19, wherein 128 data inputselections are enabled by a continuous series of 31 multiple levelnon-volatile memory cells coupled to a first single level non-volatilememory cell that is coupled to a source select gate, and a second singlelevel non-volatile memory cell that is coupled to a drain select gate.21. An electronic system, comprising: a processor; and a memory devicecoupled to the processor, wherein the memory device includes: an arrayof non-volatile memory cells including a NAND string; circuitry forcontrol and access to the array of non-volatile memory cells; andwherein the array of non-volatile memory cells includes: no sourceselect gate and no drain select gate being adjacent a multiple levelnon-volatile memory cell in the NAND string; each select gate and eachdrain select gate being adjacent a single level non-volatile memory cellin the NAND string; and no multiple level non-volatile memory cell beingadjacent more than one single level non-volatile memory cell in the NANDstring.
 22. The electronic system of claim 21, wherein the arrayincludes a plurality of serial NAND strings each coupled to a bit lineand a plurality of rows of non-volatile memory cells.
 23. A method offorming a memory array, comprising: forming a number of series couplednon-volatile memory cells; forming a number of series coupled selectgates, wherein the series coupled select gates are coupled in serieswith the number of non-volatile memory cells; and wherein forming thenumber of series coupled non-volatile memory cells includes forming afirst single level non-volatile memory cell directly coupled to a firstselect gate and directly coupled to a first multiple level non-volatilememory cell; wherein forming the number of series coupled non-volatilememory cells includes forming a second single level non-volatile memorycell directly coupled to a second select gate and directly coupled to asecond multiple level non-volatile memory cell; and wherein forming thenumber of series coupled non-volatile memory cells includes forming thefirst multiple level non-volatile memory cell and the second multiplelevel non-volatile memory cell directly coupled to at least oneinterposed multiple level non-volatile memory cell.
 24. The method ofclaim 23, wherein forming a single level non-volatile memory cellincludes forming a cell that stores a choice of two data inputselections equaling one data bit and wherein forming a multiple levelnon-volatile memory cell includes forming a cell that stores a choice offour data input selections equaling two data bits.
 25. The method ofclaim 24, wherein forming the number of series coupled non-volatilememory cells includes forming a number of NAND strings.
 26. The methodof claim 25, wherein forming each NAND string includes enabling 128 datainput selections.
 27. The method of claim 26, wherein enabling the 128data input selections is done by forming 31 multiple level non-volatilememory cells coupled to the first single level non-volatile memory cellthat is coupled to a source select gate and the second single levelnon-volatile memory cell that is coupled to a drain select gate.
 28. Themethod of claim 25, wherein forming the number of series couplednon-volatile memory cells includes forming 31 multiple levelnon-volatile memory cells and two single level non-volatile memory cellsin each NAND string.
 29. The method of claim 23, wherein forming asingle level non-volatile memory cell includes forming a cell thatstores one data bit and wherein forming a multiple level non-volatilememory cell includes forming a cell that stores a plurality of databits.
 30. A method of forming a memory block, comprising adding a numberof word lines to a string having a number of single level non-volatilememory cells and a number of multiple level memory cells for maintaininga previous memory block size.
 31. The method of claim 30, wherein addingthe number of word lines includes adding a number of non-volatile memorycells selected from single level non-volatile memory cells and multiplelevel memory cells.
 32. The method of claim 31, wherein forming thememory block includes using one or more strings having a number ofsingle level non-volatile memory cells and a number of multiple levelmemory cells.
 33. The method of claim 32, wherein maintaining theprevious memory block size includes maintaining a particular numberselected from data input selection choices, memory bits, and pagesassociated with the previous memory block size.
 34. The method of claim33, wherein maintaining the previous memory block size includesmaintaining the number of data input selection choices on a string ataround 128, the number of memory bits on a string at around 64, and thenumber of pages in a memory block at around
 128. 35. A method foroperating a memory system, comprising: applying a first select linepotential to a source select gate and second select line potential to adrain select gate; applying a first word line potential to a secondnon-volatile memory cell in a NAND string relative to a direction of thesource gate and the drain gate that is closer, wherein the secondnon-volatile memory cell is a first multiple level non-volatile memorycell directly coupled to at least one additional multiple levelnon-volatile memory cell; and applying a second word line potential to afirst non-volatile memory cell in the NAND string, which is a singlelevel non-volatile memory cell, wherein the second word line potentialis lower than the first word line potential and greater than a potentialof a directly coupled select gate.
 36. The method of claim 35, whereinapplying a potential includes applying a third word line potential to anumber of unselected non-volatile memory cells in the NAND string.
 37. Amethod of programming a memory array, comprising programming a singlelevel memory cell adjacent a select gate to a programmed state when anext adjacent multiple level memory cell is in a programmed state. 38.The method of claim 37, wherein programming the single level memory cellincludes reducing a probability of current leakage from the programmedmultiple level memory cell to the select gate adjacent the single levelmemory cell.
 39. A method for programming a NAND flash memory devicecomprising a memory array having a plurality of source select gates, aplurality of drain select gates, a plurality of single levelnon-volatile memory cells, and a plurality of multiple levelnon-volatile memory cells, the method comprising: programming the memoryarray such that no source select gate and no drain select gate isadjacent a multiple level non-volatile memory cell in a NAND string;programming the memory array such that each source select gate and eachdrain select gate is adjacent a single level non-volatile memory cell inthe NAND string; and programming the memory array such that no multiplelevel non-volatile memory cell is adjacent more than one single levelnon-volatile memory cell in the NAND string.
 40. The method of claim 39,wherein programming the NAND flash memory device comprises programming amemory array having a plurality of serial NAND strings each coupled to abit line and a plurality of rows of non-volatile memory cells.
 41. Themethod of claim 39, wherein programming the NAND flash memory deviceincludes controlling memory operations using a memory control circuit.42. The method of claim 41, wherein controlling memory operationscomprises using a state machine as the memory control circuit.